Simulation Of The Performance Of High Voltage Direct Current (Hvdc) System With Si-Gto And Sic-Gto Thyristors In Terms Of Efficiency
Keywords:
simulation, HVDC, Silicon Carbide, Silicon GTOAbstract
The paper studied how best Silicon Carbide gate turn off (SiC-GTO) thyristor can substitute Silicon gate turn off (Si-GTO) thyristor for an effective converter operation in a typical High Voltage Direct Current (HVDC) system. A monopolar HVDC 6-pulse converter configuration was chosen for the study and emphasis was placed on the converter performance results. The HVDC system was simulated using PSCAD/EMTDC software, which is a software/simulation tool for analyzing power systems. It was evident from the study that the range of efficiency for SiC GTO converter’s controlled switches were higher than that of Si GTO converter’s controlled switches. Sequel to these findings, SiC device is highly recommended since it has high efficiency compared to Si.
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